| PART |
Description |
Maker |
| M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
|
| VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| FS15R12VT3 |
IGBT-modules
IGBT Modules up to 1200V SixPACK; Package: AG-EASY750-1; IC (max): 15.0 A; VCE(sat) (typ): 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EasyPACK 750;
|
eupec GmbH
Infineon Technologies
|
| VID75-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| VID25-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| 2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
| SKM145GB124DN SKM145GAL124DN |
Low Loss IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation
POWEREX [Powerex Power Semiconductors]
POWEREX[Powerex Power Semiconductors]
|
| SEMIX553GAR128D SEMIX553GAL128D |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| SEMIX303GB12E4S |
Trench IGBT Modules
466 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX703GB126HD SEMIX703GB126HD07 |
Trench IGBT Modules 700 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX553GAR128DS09 SEMIX553GAR128DS-09 |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
